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ACS08MS
July 1998
Radiation Hardened Quad 2-Input AND Gate
Description
The Radiation Hardened ACS08MS is a Quad 2-Input AND Gate. For each gate, a HIGH level on both the A and B inputs results in a HIGH level on the Y output. A LOW level on either the A or B input results in a LOW level on the Y output. All inputs are buffered and the outputs are designed for balanced propagation delay and transition times. The ACS08MS is fabricated on a CMOS Silicon on Sapphire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. These devices offer significant power reduction and faster performance when compared to ALSTTL types. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the ACS08 are contained in SMD 5962-95651. A "hot-link" is provided on our homepage with instructions for downloading. www.intersil.com/data/sm/index.asp
Features
* QML Qualified Per MIL-PRF-38535 Requirements * 1.25Micron Radiation Hardened SOS CMOS * Radiation Environment - Latch-up Free Under any Conditions - Total Dose . . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si) - SEU Immunity . . . . . . . . . . . <1 x 10-10 Errors/Bit/Day - SEU LET Threshold . . . . . . . . . . . >100MeV/(mg/cm2) * Input Logic Levels . . .VIL = (0.3)(VCC), VIH = (0.7)(VCC) * Output Current . . . . . . . . . . . . . . . . . . . . . . . 8mA (Min) * Quiescent Supply Current. . . . . . . . . . . . . 100A (Max) * Propagation Delay . . . . . . . . . . . . . . . . . . . . .15ns (Max)
Applications
* High Speed Control Circuits * Sensor Monitoring * Low Power Designs
Ordering Information
ORDERING NUMBER 5962F9565101VCC ACS08D/SAMPLE 5962F9565101VXC ACS08K/SAMPLE 5962F9565101V9A INTERNAL MARKETING NUMBER ACS08DMSR ACS08D/SAMPLE ACS08KMSR ACS08K/SAMPLE ACS08HMSR TEMP. RANGE (oC) -55 to 125 25 -55 to 125 25 25 PACKAGE 14 Ld SBDIP 14 Ld SBDIP 14 Ld Flatpack 14 Ld Flatpack Die DESIGNATOR CDIP2-T14 CDIP2-T14 CDFP4-F14 CDFP4-F14 N/A
Pinouts
ACS08 (SBDIP) TOP VIEW
A1 1 B1 2 Y1 3 A2 4 B2 5 Y2 6 GND 7 14 VCC 13 B4 12 A4 11 Y4 10 B3 9 A3 8 Y3
ACS08 (FLATPACK) TOP VIEW
A1 B1 Y1 A2 B2 Y2 GND
1 2 3 4 5 6 7
14 13 12 11 10 9 8
VCC B4 A4 Y4 B3 A3 Y3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999
File Number
3993.1
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ACS08MS Die Characteristics
DIE DIMENSIONS: Size: 2390m x 2390m (94 mils x 94 mils) Thickness: 525m 25m (20.6 mils 1 mil) Bond Pad: 110m x 110m (4.3 mils x 4.3 mils) METALLIZATION: Al Metal 1 Thickness: 0.7m 0.1m Metal 2 Thickness: 1.0m 0.1m SUBSTRATE POTENTIAL: Unbiased Insulator PASSIVATION Type: Phosphorous Silicon Glass (PSG) Thickness: 1.30m 0.15m SPECIAL INSTRUCTIONS: Bond VCC First ADDITIONAL INFORMATION: Worst Case Density: <2.0 x 105 A/cm2 Transistor Count: 176
Metallization Mask Layout
ACS08MS
B1 A1 VCC B4
Y1
A4
A2
Y4
NC
NC
B2
B3
Y2
GND
Y3
A3
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Sales Office Headquarters
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